this is information on a product in full production. january 2015 docid027332 rev 1 1/8 STPSC12C065-Y automotive 650 v power schottky silicon carbide diode datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? dedicated to pfc applications ? high forward surge capability ? aec-q101 qualified ? ppap c apable ? ecopack?2 compliant component description the sic diode is an ultrahigh performance power schottky diode. it is manufactured using a silicon carbide substrate. the wide band gap material allows the design of a schottky diode structure with a 650 v rating. due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. the minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications. especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. its high forward surge capability ensures a good robustness during transient phases. . 7 2 $ & . $ . $ table 1. device summary symbol value i f(av) 12 a v rrm 650 v t j (max) 175 c www.st.com
characteristics STPSC12C065-Y 2/8 docid027332 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 1.35 x i f(av) + 0.096 x i f 2 (rms) table 2. absolute ratings (limiting values at 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage, t j = -40 c 650 v i f(rms) forward rms current 22 a i f(av) average forward current t c = 120 c (1) , = 0.5 1. value based on r th(j-c) max. 12 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal, t c = 25 c t p = 10 ms sinusoidal, t c = 125 c t p = 10 s square, t c = 25 c 92 84 470 a i frm repetitive peak forward current t c = 120 c (1) , t j = 175 c, = 0.1 51 a t stg storage temperature range -65 to +175 c t j operating junction temperature (2) 2. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 c table 3. thermal resistance symbol parameter value unit typ. m ax. r th(j-c) junction to case 1.2 1.7 c/w table 4. static electrical characteristics symbol parameter tests conditions min. typ. max. unit i r (1) 1. t p = 10 ms, < 2% reverse leakage current t j = 25 c v r = v rrm -10120 a t j = 150 c - 100 500 v f (2) 2. t p = 500 s, < 2% forward voltage drop t j = 25 c i f = 12 a -1.561.75 v t j = 150 c - 1.98 2.5 table 5. dynamic electrical characteristics symbol parameter test conditions typ. unit q cj (1) 1. most accurate value for the capacitive charge: total capacitive charge v r = 400 v 29.3 nc c j to ta l c a pa ci tan c e v r = 0 v, t c = 25 c, f = 1 mhz 530 pf v r = 300 v, t c = 25 c, f = 1 mhz 55 dptot dtj --------------- 1 rth j a ? () ------------------------- - < q = c j (v r ).dv r cj v out 0
docid027332 rev 1 3/8 STPSC12C065-Y characteristics 8 figure 1. forward voltage drop versus forward current (typical values, low level) figure 2. forward voltage drop versus forward current (typical values, high level) , ) $ 7 d ? & 9 ) 9 7 d ? & 7 d ? & 3 x o v h w h v w w s ? v 7 d ? & , ) $ 7 d ? & 9 ) 9 7 d ? & 7 d ? & 7 d ? & 3 x o v h w h v w w s ? v figure 3. reverse leakage current versus reverse voltage applied (typical values) figure 4. peak forward current versus case temperature ( ( ( ( ( ( ( ( 9 5 9 7 m ? & 7 m ? & 7 m ? & , 5 ? $ 7 f ? & |